TSM60NB900CP ROG
TSM60NB900CP ROG
Part Number TSM60NB900CP ROG Description MOSFET N-CHANNEL 600V 4A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 4A (Tc) 36.8W (Tc) Surface Mount TO-252, (D-Pak)
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TSM60NB900CP ROG - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB900CP Standard Package 1 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V FET Feature - Power Dissipation (Max) 36.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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